NVH4L030N120M3S
NVH4L030N120M3S
Part number:
5556-NVH4L030N120M3S-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Sanyo Semiconductor/onsemi
Type
SILICON CARBIDE
Encapsulation
Package
Tube
RoHS:
NO
Quantity
630
$1.6200
Minimun: 1
multiples: 1
Quantity
Price
Total
1
$1.9536
$1.9536
30
$1.6200
$48.6000
120
$1.5184
$182.2080
510
$1.2960
$660.9600
NVH4L030N120M3S NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Rds On (Max) @ Id, Vgs39mOhm @ 30A, 18V
Power Dissipation (Max)313W (Tc)
Vgs(th) (Max) @ Id4.4V @ 15mA
Supplier Device PackageTO-247-4L
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2430 pF @ 800 V
QualificationAEC-Q101
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